High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2003
ISSN: 0018-9383
DOI: 10.1109/ted.2003.815603